inchange semiconductor isc product specification 1 isc website www.iscsemi.cn isc silicon npn darlington power transistor m jh11018 description high dc current gain- : h fe = 400(min)@ i c = 10a collector-emitter sustaining voltage- : v ceo(sus) = 150v(min) low collector-emitter saturation voltage- : v ce(sat) = 2.5v(max)@ i c = 10a = 4.0v(max)@ i c = 15a complement to type mjh11017 applications designed for general purpose amplifiers ,low frequency switching and motor control applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 150 v v ceo collector-emitter voltage 150 v v ebo emitter-base voltage 5 v i c collector current-continuous 15 a i cm collector current-peak 30 a i b base current- continuous 0.5 a p c collector power dissipation @t c =25 150 w t j junction temperature 150 t stg storage temperature range -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 0.83 /w
inchange semiconductor isc product specification 2 isc website www.iscsemi.cn isc silicon npn darlington power transistor m jh11018 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 100ma, i b = 0 150 v v ce(sat)-1 collector-emitter satu ration voltage i c = 10a ,i b = 0.1a 2.5 v v ce(sat)-2 collector-emitter satu ration voltage i c = 15a ,i b = 0.15a 4.0 v v be(sat) base-emitter satura tion voltage i c = 15a ,i b = 0.15a 3.8 v v be(on) base-emitter on voltage i c = 10a ; v ce = 5v 2.8 v i cev collector cutoff current v cev =150v;v be (off) =1.5v v cev =150v;v be (off) =1.5v;t c =150 0.5 5.0 ma i ceo collector cutoff current v ce = 75v, i b =0 1 ma i ebo emitter cutoff current v eb = 5v; i c =0 2 ma h fe-1 dc current gain i c = 10a ; v ce = -5v 400 15000 h fe-2 dc current gain i c = 15a ; v ce = -5v 100 c ob output capacitance i e = 0 ; v cb = 10v,f= 0.1mhz 400 pf switching times t d delay time i c = 10a , v cc = 100v; i b = 0.1a; v be (off) = 5v; duty cycle 2.0% 150 ns t r rise time 1.2 s t s storage time 4.4 s t f fall time 2.5 s
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